ertiny.blogg.se

Download 2n3906
Download 2n3906










The 2N3906 is a commonly used PNP (Positive-negative-Positive) bipolar junction transistor used for general-purpose low-power amplifying and switching applications.

  • BD139 Transistor Pinout, Features, Alternate.
  • 2N3906 Pinout, Features, Equivalent uses.
  • 2N3904 Transistor Pinout, Features and applications.
  • TIP32C Transistor pinout Features and Applications.
  • KSA992 Transistor Pinout, Features and uses.
  • KSA1220 Transistor pinout, Features and other detail.
  • TIP127 Transistor Pinout, equivalent & Features.
  • TIP122 Transistor Pinout, Equivalent, Uses, Features.
  • download 2n3906

  • TIP120 Transistor Pinout, Equivalent and Features.
  • BC557 Transistor Pinout, Equivalent, Features Features Specifications.
  • BC548 Transistor Pinout, Equivalent, Uses.
  • BC547 Transistor Pinout, Features, uses, working.
  • 2SA1015 Transistor, Pinout, Features ,alternate.
  • download 2n3906

    IRF3205 MOSFET Pinout, Its Features and Application.C1815 Transistor Pinout, Equivalent, Uses, Features.IRF740 N-Channel Power Mosfet Features, Application.C945 Transistor Pinout, feature, Equivalent.C828 transistor Pinout, Equivalent, uses, working.Darlington Pair transistor configuration and features.They are presented together with additional test conditions highlighted in a separate column and ambient temperature not exceeding +25☌. Let’s consider the electrical parameters that are indicated in the datasheet in a separate summary table, as a rule, after the maximum allowable. Most often the temperature range of storage and use from – 65 to + 150☌, the maximum power up to 625 mW, and the peak collector current up to 300 mA are most often increased. Therefore, there are some 2N3906 with improved specifications. It is worth bearing in mind the constant improvement of component designs by manufacturers. temperature: crystal T J (T K) up to 150 ☌ T STG storage (T XP.) possible working T AMB (T RAB.) – 55 … 150 ☌.

    download 2n3906

    the maximum possible power of the R S (Р k max) = 500 mW.short-term collector current maximum I CP (I k peak) = -200 mA.maximum allowable DC collector current I C (I k max) = -100 mA.the voltage between the emitter and the base is the maximum possible V EBO (U eb max) = -5 V.voltage between collector and emitter maximum allowable V CEO (U ke max) = -40 V.the voltage between the collector and the base is maximum V CBO (U kb max) – 40 V.The values of these parameters must not be exceeded: They are designed for ambient temperatures up to +25☌.

    download 2n3906

    The maximum permissible specifications of the transistor, all known manufacturers, are specified at the very beginning of the technical description. These plastic packages, with three short pins, are designed for surface mount (SMD) applications. Fairchild Semiconductor has them in SOT-223. Fairchild Semiconductor, Jiangsu Changjiang Electronics Technology, Daya Electric Group, General Semiconductor, Silicon Standard, Daya Electric Group, GUANGDONG HOTTECH INDUSTRIAL, SHENZHEN KOO CHIN ELECTRONICS also produce this product in SOT-23.












    Download 2n3906